View BTC4102S3_1221188.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C208S3 Issued Date : 2003.06.11 Revised Date : Page No. : 1/4
BTC4102S3
Description
The BTC4102S3 is designed for high voltage amplification application.
Features
* High breakdown voltage. (BVCEO=120V) * Complementary to BTA1579S3
Symbol
BTC4102S3
Outline
SOT-323
BBase CCollector EEmitter
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 120 120 5 50 200 150 -55~+150 Unit V V V mA mW C C
BTC4102S3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 120 120 5 56 Typ. 140 2.5 Max. 0.5 0.5 0.5 390 Unit V V V A A V MHz pF
Spec. No. : C208S3 Issued Date : 2003.06.11 Revised Date : Page No. : 2/4
Test Conditions IC=50A IC=1mA IC=50A VCB=100V VEB=4V IC=10mA, IB=1mA VCE=6V, IC=2mA VCE=12V, IC=2mA, f=100MHz VCB=12V, IE=0A, f=1MHz
*Pulse Test : Pulse Width 380s, Duty Cycle2%
Classification Of hFE
Rank Range K 56~120 P 82~180 Q 120~270 R 180~390
BTC4102S3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current 1000
Current Gain---HFE
HFE@VCE=6V
Spec. No. : C208S3 Issued Date : 2003.06.11 Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
1000 Saturation Voltage---(mV)
VCE(SAT)@IC=10IB
100
100 0.1 1 10 100
Collector Current--- IC(mA)
10 0.1 1 10 100
Collector Current ---IC(mA)
Saturation Voltage vs Collector Current
1000 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) 1
Cutoff Frequency vs Collector Current
FT@VCE=12V
VBE(SAT)@IC=10IB
100 0.1 1 10 100 1000 Collector Current ---IC(mA)
0.1 1 10 Collector Current---IC(mA) 100
Power Derating Curve
250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 200 Ambient Temperature ---Ta( )
BTC4102S3
CYStek Product Specification
CYStech Electronics Corp.
SOT-323 Dimension
Spec. No. : C208S3 Issued Date : 2003.06.11 Revised Date : Page No. : 4/4
3
A
Marking:
A1 Q Lp
detail Z W B
C
1 e1 e D bp
2
TE G1
E
A
Z
He
0 1 scale 2 mm
3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3
v A
Style: Pin 1.Base 2.Emitter 3.Collector
*: Typical
DIM A A1 bp C D E e
Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 -
Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 -
Inches DIM Min. Max. e1 0.0256 He 0.0787 0.0886 Lp 0.0059 0.0177 Q 0.0051 0.0091 v 0.0079 w 0.0079
Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10 0
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC4102S3
CYStek Product Specification

▲Up To Search▲

Price & Availability of BTC4102S3

	To Download BTC4102S3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .